features ? high voltage operation (vds=28v) gaas fet ? high gain: 15.5db(typ.) at pout=41.8dbm(avg.) ? broad frequency range : 2110 to 2170mhz ? high reliability description the FLL21E060IY is a high power gaas fet that offers high efficiency, ease of matching, greater consis tency and broad bandwidth for high power l-band amplifiers. this devic e is targeted for high voltage, low current operation in digitally modul ated base station amplifiers. this product is ideally suited for w-cdma and multi-carrier pcs base station amplifiers while offering high gain, long term reliability and ease of use. edition 1.1 june 2004 1 FLL21E060IY l,s-band high power gaas fet absolute maximum rating item symbol condition unit drain-source voltage v ds v gate-source voltage v gs v total power dissipation p t w storage temperature t stg - o c channel temperature t ch - o c recommended operating condition (case temperature tc=25 o c) item symbol condition unit dc input voltage v ds v forward gate current i gf r g =2 ? ma reverse gate current i gr r g =2 ? ma channel temperature t ch o c electrical characteristics (case temperature tc=25 o c) min. typ. max. pinch-off voltage v p v ds =5v i ds =94.3ma -0.1 -0.2 -0.5 v gate-source breakdown voltage v gso i gs =-943ua -5 - - v 3rd order intermodulation distortion im 3 --33-31 dbc power gain g p 14.5 15.5 - db drain efficiency d -26- % adjacent channel leakage power ratio aclr - -35 - dbc themal resistance r th channel to case - 1.5 1.7 o c/w note 1 : im 3 , aclr and gain test conditions as follows im 3 & gain : f 0 =2.1325ghz, f 1 =2.1475ghz w-cdma(3gpp3.4 12-0) bs-1 64ch non clipping modulation measured over 3.84mhz at f 0 -15mhz and f 1 +15mhz. aclr : f 0 =2.1325ghz w-cdma (3gpp3.4 12-00) bs-1 64ch non clipping modulation, measured over 3.84mhz at f 0 +/-5mhz esd note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) case style : iy class iii 2000v ~ t c =25 o c (case temperature) rating 32 -3 102 limit 155 65 to +175 200 <28 <113.6 >-22.1 v ds =28v i ds (dc)=630ma p out =41.8dbm(avg.) no t e 1 unit item symbol condition limit
2 output power & drain efficiency vs. input power v ds =28v, i ds =630ma, f=2.14ghz output power vs. frequency v ds =28v, i ds =630ma FLL21E060IY l,s-band high power gaas fet two-carrier imd(aclr) vs. output power v ds =28v i ds =630ma f 0 =2.135, f 1 =2.145ghz w-cdma 3-gpp bs-1 64ch modulation 26 28 30 32 34 36 38 40 42 44 46 48 50 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 frequency [ghz] output power [dbm] pin=15dbm pin=20dbm pin=25dbm pin=30dbm pin=35dbm 30 32 34 36 38 40 42 44 46 48 50 15 17 19 21 23 25 27 29 31 33 35 37 input pow er[dbm ] output power[dbm] 0 10 20 30 40 50 60 70 80 90 100 drain efficiency[%] d pout -60 -55 -50 -45 -40 -35 -30 -25 24 26 28 30 32 34 36 38 40 42 44 46 48 output power[dbm] imd[dbc] 0 5 10 15 20 25 30 35 drain efficiency[%] im3l im5l drain efficiency single-carrier aclr vs. output power v ds =28v i ds =630ma fo=2.1325ghz w-cdma 3gpp bs-1 64ch modulation -65 -60 -55 -50 -45 -40 -35 -30 24 26 28 30 32 34 36 38 40 42 44 46 48 output power[dbm] aclr[dbc] 0 5 10 15 20 25 30 35 drain efficiency[%] +/-5mhz +/-10mhz drain efficiency
FLL21E060IY l,s-band high power gaas fet 3 board layout circuit diagram of the board v gs v ds c1 c2 c5 c8 c6 c7 l1 c9 c10x5 r1 c12 c11 c13 c14 c15 r2 c16 c17 c18 c19 c4 c3 r=3.5 t=0.8mm z1, z12 9.00mm x 1.78mm transmission line z2 16.3mm x 1.78mm transmission line z3 7.00mm x 1.78mm transmission line z4 6.00mm x 13.0mm transmission line z5 3.50mm x 0.50mm transmission line z6 6.00mm x 13.0mm transmission line z7 23.0mm x 0.50mm transmission line z8 6.00mm x 25.0mm transmission line z9 23.0mm x 1.50mm transmission line z10 9.50mm x 13.0mm transmission line z11 23.3mm x 1.78mm transmission line c1,c2 10pf c3,c7 1.0pf c4,c6 0.75pf c5,c9 1.5pf c8 0.5pf c10 0.1uf c11,c16 20pf c12,c17 100nf c13,c18 1000pf c14,c15 10uf c18 22uf l1 3.3nf r1 2.0ohm r2 51ohm board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm z1 z2 z3 z4 z5 z6 z7 c15c14 z8 z9 z10 z11 z12 c1 c2 c3 c4 c5 c6 c7c8 c9 l1 c10x5 c11 c12 c13 c16c17c18c19 r2 r1
FLL21E060IY l,s-band high power gaas fet 4 s-parameters @ v ds =28v, i ds =630ma, f=1.0 to 3.0 ghz s11 s22 2.0g h z 2. 1 2.0g h z 25 2. 2 2. 2 2. 1 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10 s12 s21 0.4 0.2 8 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 2.0ghz 4 2.2 2.1 2.0ghz 2.1 2.2 [ghz] s11(mag) s11(ang) s21(mag) s21(ang) s12(mag) s12(ang) s22(mag) s22(ang) 1 0.961 -176.42 0.480 4.24 0.002 70.01 0.933 -173.72 1.1 0.957 -176.29 0.468 -0.94 0.003 71.76 0.935 -174.51 1.2 0.953 -176.44 0.479 -5.13 0.003 69.92 0.930 -175.43 1.3 0.949 -176.61 0.512 -10.30 0.005 75.49 0.932 -176.11 1.4 0.943 -177.14 0.571 -16.29 0.005 71.35 0.928 -177.11 1.5 0.933 -178.20 0.665 -22.90 0.007 66.87 0.915 -177.79 1.6 0.911 -179.23 0.830 -31.26 0.009 58.53 0.908 -179.13 1.7 0.881 179.01 1.091 -42.42 0.011 49.89 0.885 178.94 1.8 0.833 177.08 1.532 -57.22 0.015 36.71 0.850 177.15 1.9 0.749 174.48 2.331 -78.13 0.022 17.53 0.829 173.66 2 0.609 171.95 3.889 -108.90 0.034 -13.62 0.815 163.99 2.1 0.263 -172.76 6.931 -165.59 0.052 -71.77 0.654 113.03 2.11 0.242 -156.52 7.194 -174.60 0.053 -80.54 0.599 100.93 2.12 0.252 -140.46 7.389 176.42 0.053 -89.96 0.541 86.80 2.13 0.306 -126.52 7.360 166.64 0.052 -99.95 0.478 69.57 2.14 0.378 -120.67 7.291 156.88 0.051 -110.43 0.419 48.81 2.15 0.457 -119.30 7.041 146.98 0.048 -119.43 0.382 25.67 2.16 0.531 -120.31 6.706 137.94 0.044 -129.46 0.373 1.34 2.17 0.596 -122.55 6.274 129.48 0.041 -137.37 0.388 -20.78 2.18 0.645 -124.52 5.836 121.87 0.037 -146.92 0.421 -39.36 2.19 0.696 -127.28 5.392 114.90 0.035 -152.94 0.461 -53.66 2.2 0.730 -130.24 4.968 108.68 0.030 -159.30 0.503 -65.54 2.3 0.859 -143.77 2.285 69.86 0.012 156.65 0.754 -113.65 2.4 0.894 -148.81 1.271 50.96 0.006 130.95 0.838 -127.60 2.5 0.916 -151.41 0.835 38.99 0.002 108.48 0.884 -134.62 2.6 0.923 -153.20 0.595 29.68 0.001 102.28 0.905 -138.74 2.7 0.927 -154.54 0.459 22.97 0.001 157.08 0.918 -141.00 2.8 0.936 -155.53 0.384 16.60 0.002 118.47 0.925 -143.07 2.9 0.932 -157.09 0.332 11.02 0.003 119.75 0.925 -145.09 3 0.928 -158.33 0.311 6.31 0.003 121.74 0.918 -146.72
FLL21E060IY l,s-band high power gaas fet 5 iy package outline unit : mm 9.779 34.036 12.7 4.826 4.826 9.98 r1.524 3.251 29.50 1.575 0.152
FLL21E060IY l,s-band high power gaas fet 6 for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel +81-55-275-4411 fax +81-55-275-9461 sales division 1, kanai-cho, sakae-ku yokohama,244-0845,japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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